Method of producing field effect transistor

Details Method of producing field effect transistor Method of producing field effect transistor

2011-08-16

2011-08-16

Stark, Jarrett J (Department: 2823)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S795000, C257SE21120, C257SE21454, C257SE21324, C257SE21497

Reexamination Certificate

active

07998848

ABSTRACT:
The laser beam with a wavelength having a higher energy than the band gap energy of the material forming the carrier moving layer is irradiated to activate the impurities contained in the constituent layer of the field effect transistor in the method of producing the field effect transistor. The method of the invention does not apply the heating of the substrate or the sample stage to raise the temperature of the semiconductor layer using the thermal conductivity so as to activate the impurities. Thus, the implanted impurities can be activated without deteriorating the performance of the device and reliability.

REFERENCES:
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Y. Irokawa et al., “Implantation temperature dependence of Si activation in AlGaN,” Appl. Phys. Lett. 88 (2006) 182106.
S. Matsunaga et al., “Silicon implantation in epitaxial GaN layers: Encapsulant annealing and electrical properties,” J. Appl. Phys. 95 (2004) 2461.
J. A. Fellows, “Electrical activation studies of GaN implanted with Si from low to high dose,” Appl. Phys. Lett. 80 (2002) 1930.

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