Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2011-08-16
2011-08-16
Stark, Jarrett J (Department: 2823)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S795000, C257SE21120, C257SE21454, C257SE21324, C257SE21497
Reexamination Certificate
active
07998848
ABSTRACT:
The laser beam with a wavelength having a higher energy than the band gap energy of the material forming the carrier moving layer is irradiated to activate the impurities contained in the constituent layer of the field effect transistor in the method of producing the field effect transistor. The method of the invention does not apply the heating of the substrate or the sample stage to raise the temperature of the semiconductor layer using the thermal conductivity so as to activate the impurities. Thus, the implanted impurities can be activated without deteriorating the performance of the device and reliability.
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Y. Irokawa et al., “Implantation temperature dependence of Si activation in AlGaN,” Appl. Phys. Lett. 88 (2006) 182106.
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Ikeda, legal representative Masatoshi
Kambayashi Hiroshi
Niiyama Yuki
Nomura Takehiko
Yoshida Seikoh
Furukawa Electric Co. Ltd.
Kubotera & Associates LLC
Stark Jarrett J
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