Method of producing ferroelectric LiNb.sub.1-31 x Ta.sub.x O.sub

Details Method of producing ferroelectric LiNb.sub.1-31 x Ta.sub.x O.sub Method of producing ferroelectric LiNb.sub.1-31 x Ta.sub.x O.sub

1990-04-30

1991-01-01

Morgenstern, Norman

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 38, 4271263, 427166, 4272553, 4271262, 427165, B05D 306, B05D 512

Patent

active

049817140

ABSTRACT:
A method of producing a ferroelectric thin film comprising the steps of evaporating metal Li or an oxide thereof as a Li source, metal Nb or an oxide thereof as a Nb source and metal Ta or an oxide thereof as a Ta source in a substantially oxygen gas plasma atmosphere while controlling the respective heating temperatures independently from each other and simultaneously depositing the Li, Nb and Ta on a substrate so as to obtain an LiNb.sub.1-x Ta.sub.x O.sub.3 (0<x<1) thin film which shows ferroelectricity.

REFERENCES:
patent: 4361114 (1982-11-01), Gurev
patent: 4362765 (1982-12-01), Abe et al.
patent: 4813768 (1989-03-01), Hamaguchi et al.

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