Method of producing epitaxially semiconductor layers

Details Method of producing epitaxially semiconductor layers Method of producing epitaxially semiconductor layers

1973-03-08

1976-03-02

Weiffenbach, Cameron K.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156613, B44D 118

Patent

active

039416470

ABSTRACT:
Method of producing epitaxially deposited layers of semiconductor material on a substrate by thermal decomposition of a gaseous compound of a select semiconductor material and depositing a seed layer of such semiconductor on the substrate and then adding a hydrogen halide to the gaseous compound and depositing additional semiconductor material on the seed layer.

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patent: 3139361 (1964-06-01), Rasmanis
patent: 3177100 (1965-04-01), Mayer et al.
patent: 3192083 (1965-06-01), Sirtl
patent: 3212922 (1965-10-01), Sirtl
patent: 3445300 (1969-05-01), Sirtl
patent: 3484311 (1969-12-01), Benzing
patent: 3508962 (1970-04-01), Manasevit et al.
patent: 3511702 (1970-05-01), Jackson, Jr. et al.
patent: 3653991 (1972-04-01), Sirtl et al.
patent: 3698944 (1972-10-01), Dyer
Filby et al. Single-crystal films of silicon on insulators In Brit. J. Appl. Phys. 18: pp. 1357 to 1382, 1967.
Hart et al. Electrical properties of epitaxial silicon films on .alpha.-alumina In Brit. J. Appl. Phys. 18: pp. 1389 to 1398, 1967.
Reisman et al. The Chemical Polishing of Sapphire and MgAl Spinel In J. Electrochem. Soc.:Solid State Science. 118(10): pp. 1653-1657. Oct. 1971.

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