Method of producing electronic device material

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S792000

Reexamination Certificate

active

06897149

ABSTRACT:
A process for producing an electronic device material of a high quality MOS-type semiconductor having an insulating layer and a semiconductor layer with excellent electrical characteristics. A substrate incorporating single-crystal silicon as a main component is CVD-treated to form an insulating layer. The substrate is then exposed to a plasma generated from a process gas by microwave radiation from a plane antenna having a plurality of slots, to thereby modify the insulating film.

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patent: 4988533 (1991-01-01), Freeman et al.
patent: 6650678 (2003-11-01), Ohmi et al.
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patent: 2000-106438 (2000-04-01), None
patent: 2000-124214 (2000-04-01), None
patent: 2000-332245 (2000-11-01), None

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