Method of producing display device, display device, method...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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Details

C438S158000, C438S166000, C438S487000, C257SE21414

Reexamination Certificate

active

08034672

ABSTRACT:
A method of producing a display device includes the steps of forming gate electrodes on a substrate so that an arrangement of a source and a drain, in a pixel row direction, of a thin-film transistor formed in each of pixels on the substrate is reversed every pixel row; forming a gate insulating film and an amorphous semiconductor thin film on the substrate in that order so as to cover the gate electrodes; crystallizing the semiconductor thin film by irradiating the semiconductor thin film with an energy beam so that a scanning direction of the energy beam is the same with respect to the arrangement of the source and the drain in the pixel row direction; and forming a light-emitting element connected to the thin-film transistor.

REFERENCES:
patent: 6723590 (2004-04-01), Zhang et al.
patent: 7253864 (2007-08-01), Kikuchi et al.
patent: 2001-320055 (2001-11-01), None
patent: 2002-366057 (2002-12-01), None
patent: 2003-045890 (2003-02-01), None
patent: 2004-087620 (2004-03-01), None
patent: 2006-140462 (2006-06-01), None
patent: 2007-035964 (2007-02-01), None
patent: 2008-033193 (2008-02-01), None
patent: 2008-033194 (2008-02-01), None
patent: 2009-109619 (2009-05-01), None
patent: 2009-122335 (2009-06-01), None
patent: 2009-122336 (2009-06-01), None
patent: 2009-128404 (2009-06-01), None
Japanese Office Action issued Mar. 2, 2010 for corresponding Japanese Application No. 2008-323361.
Japanese Office Action issued Apr. 13, 2010 for corresponding Japanese Application No. 2008-101331.

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