Method of producing dielectric film

Details Method of producing dielectric film Method of producing dielectric film

1998-07-21

2000-05-23

Nelms, David

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438623, 438476, 438758, 257632, 257758, 430296, H01L 2131, H01L 21469

Patent

active

060665734

ABSTRACT:
A surface of a substrate is coated with a coating agent to form a coating film. The coating agent contains a material capable of generating moisture (for example, hydrogen-silsesquioxane or hydroxysilazane) and an additive capable of generating a gas by reaction with the moisture thus generated (for example, a material containing an isocyanate group). By heat-treatment of the substrate, moisture is generated from the coating film and a gas is discharged from the coating film by reaction between the moisture thus generated and the additive, to form fine voids in the coating film. Such a coating film is converted into a dielectric film having a low dielectric constant.

REFERENCES:
patent: 5364818 (1994-11-01), Ouellet
patent: 5484687 (1996-01-01), Watanabe et al.
patent: 5604380 (1997-02-01), Nishimura et al.
patent: 5899751 (1999-04-01), Chang et al.
patent: 5924005 (1999-07-01), Waldo
patent: 5949130 (1999-09-01), Fukuyama et al.

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