Method of producing copper platforms for integrated circuits

Details Method of producing copper platforms for integrated circuits Method of producing copper platforms for integrated circuits

1985-08-20

1987-03-24

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29591, 156656, 1566591, 156664, 156666, 204 15, 204 385, 2041923, 20419235, 357 71, 427 90, C23F 102, B44C 122, C03C 1500, C03C 2506

Patent

active

046523367

ABSTRACT:
A method for producing a copper platform on integrated circuits formed on a semiconductor wafer wherein an aluminum layer is back-sputtered over the circuits to provide contact surfaces thereon, followed by sputtering on successive layers of titanium and copper on the aluminum layer. A copper platform is electrolytically built up above the aluminum layer and thereafter the copper layer is etched away. The copper platform is then metallized by electroless deposition, and finally the titanium layer is etched away.

REFERENCES:
patent: 3791952 (1974-02-01), Labuda et al.
patent: 4087314 (1978-05-01), George et al.
patent: 4341594 (1982-07-01), Carlson et al.

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