Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-12-12
2006-12-12
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S761000, C156S089110, C257SE23009, C257SE23106
Reexamination Certificate
active
07148136
ABSTRACT:
A composite laminate, including shrink-prevention ceramic green sheets arranged on the main surfaces of an unfired ceramic laminate and having a sintering temperature greater than the firing temperature of the unfired ceramic laminate, is fired at a temperature which is greater than the sintering temperature of the unfired ceramic laminate, and which is less than the sintering temperature of the shrink-prevention ceramic green sheet. Thereafter, the shrink-prevention ceramic green sheets are removed in a first removing step of spraying water and compressed gas against the shrink-prevention ceramic green sheets so as to remove a portion thereof that has not reacted with a glass component of the unfired ceramic laminate, and in a second removing step of ceramic powder, spraying water, and compressed air, such that a residual material not removed in the first removing step is removed, and in a third removing step of supersonic-cleaning the ceramic multi-layer substrate after the first and second steps.
REFERENCES:
patent: 6740183 (2004-05-01), Segawa et al.
patent: 0 993 242 (2000-04-01), None
patent: 04-243978 (1992-09-01), None
patent: 2000-277914 (2000-10-01), None
patent: WO99/56510 (1999-11-01), None
Estrada Michelle
Keating & Bennett LLP
Murata Manufacturing Co. Ltd.
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