Method of producing carbon-doped amorphous silicon thin film

Details Method of producing carbon-doped amorphous silicon thin film Method of producing carbon-doped amorphous silicon thin film

1989-09-14

1990-11-06

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156657, 156662, 2041923, 20419237, 427 38, 437228, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

049683845

ABSTRACT:
A method of producing a carbon-doped amorphous silicon thin film upon a substrate comprising the steps of growing a carbon-doped amorphous silicon layer by plasma assisted chemical vapor deposition, including generating a glow discharge in a gaseous mixture of a silane gas and a hydrocarbon gas, and exposing said carbon-doped amorphous silicon layer to a plasma in a gas containing hydrogen to achieve a resultant layer having a prescribed value of photoconductivity.

REFERENCES:
patent: 4599135 (1986-07-01), Tsunekawa et al.
A. Asano, T. Ichimura, Y. Uchida and H. Sakai, Characterization of .alpha.-Si.sub.1-x C.sub.x :H/.alpha.-Si:H and .alpha.-Si:H and .alpha.-SiN:H/.alpha.-Si:H Heterojunctions by Photothermal Deflection Spectroscopy, J. Appl. Phys. 63(7), Apr. 1, 1988, pp. 2346-2351.

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