Method of producing buried porous silicon-geramanium layers in m

Details Method of producing buried porous silicon-geramanium layers in m Method of producing buried porous silicon-geramanium layers in m

1995-02-15

1997-11-11

Quach, T. N.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

437131, 148 334, H01L 21302

Patent

active

056859465

ABSTRACT:
Lattices of alternating layers of monocrystalline silicon and porous silicon-germanium have been produced. These single crystal lattices have been fabricated by epitaxial growth of Si and Si--Ge layers followed by patterning into mesa structures. The mesa structures are stain etched resulting in porosification of the Si--Ge layers with a minor amount of porosification of the monocrystalline Si layers. Thicker Si--Ge layers produced in a similar manner emitted visible light at room temperature.

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