Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-06-07
2011-06-07
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S158000, C438S269000, C438S283000, C257S347000, C257SE21415, C257SE27112, C257SE29275, C257SE29277
Reexamination Certificate
active
07955914
ABSTRACT:
A method is for producing an asymmetric architecture semiconductor device. The device includes a substrate, and in stacked relation, a first photosensitive layer, a non-photosensitive layer, and a second photosensitive layer. The method includes a first step of exposing a first zone in each of the photosensitive layers by a first beam of electrons traversing the non-photosensitive layer. A second step includes exposing at least one second zone of one of the two photosensitive layers by a second beam of electrons or photons or ions, thereby producing a widening of one of the first zones compared to the other first zone such that the second zone is in part superimposed on one of the first zones.
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Bustos Jessy
Coronel Philippe
Manakli Serdar
Pain Laurent
Allen Dyer Doppelt Milbrath & Gilchrist, P.A.
Commissariat a l''Energie Atomique
Jorgenson Lisa K.
Lindsay, Jr. Walter L
Pompey Ron
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