Method of producing an acceleration sensor of a semiconductor

Details Method of producing an acceleration sensor of a semiconductor Method of producing an acceleration sensor of a semiconductor

1992-03-09

1993-06-29

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566591, 156662, 73517R, H01L 21306, B44C 122

Patent

active

052230864

ABSTRACT:
This invention relates to a method of producing an acceleration sensor of a semiconductor. Piezo resistance layers are formed in a silicon tip 2 of a single crystal etched in an anisotropic etching liquid such as a KOH solution, etc., using as a mask a silicon nitride film. Then the silicon tip 2 of the single crystal is soaked in an isotropic etching liquid for a predetermined time and is etched to a depth of 0.5-2.0 .mu.m. Further, a photoresist is applied over a whole surface thereof to form a slot extending to a hollow.

REFERENCES:
patent: 4670092 (1987-06-01), Motamedi
patent: 4776924 (1988-10-01), Delapierre
patent: 4783237 (1988-11-01), Aine et al.
patent: 4981552 (1991-01-01), Mikkor

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