Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1997-09-23
2000-09-12
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419215, C23C 1435
Patent
active
061172820
ABSTRACT:
A method of producing SiNx protected amorphous Co-Tb thin films with high coercivity for longitudinal and perpendicular magnetic recording media is described. The method includes magnetron sputtering at controlled sputtering power and sputtering argon gas pressure to form a selective composition of amorphous Co-Tb thin film on a low temperature substrate. After the Co-Tb film is deposited, a protective SiNx layer with thickness of 100 .ANG. was produced on the film. The as-deposited film has an amorphous structure with a high value of coercivity, and its magnetic easy-axis is perpendicular to the film plane. This film can be used as a perpendicular magnetic recording medium. After low temperature annealing at controlled conditions for a desirable temperature and time period in vacuum, the film also has an amorphous structure but its magnetic properties are isotropic. This film can be used as a longitudinal magnetic recording medium.
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Kuo Chih-Ming
Kuo Po-Cheng
Nguyen Nam
VerSteeg Steven H.
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