Method of producing active semiconductor layers of different...

Details Method of producing active semiconductor layers of different... Method of producing active semiconductor layers of different...

2006-02-21

2006-02-21

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S413000

Reexamination Certificate

active

07001804

ABSTRACT:
An SOI wafer including an active semiconductor material layer on an insulating layer is processed to form thereon first and second active semiconductor regions that respectively have different thicknesses and that are vertically and laterally insulated. In the process, a trench is etched into the SOI wafer, seed openings are formed in the bottom of the trench to reach the underlying active material layer, the trench is filled with epitaxially grown semiconductor material progressing from the seed openings, some of the epitaxially grown material is removed to form the second active regions, and oxide layers are provided so that the second active regions are laterally and vertically insulated from the first active regions formed by remaining portions of the active semiconductor material layer.

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