Method of producing a thin silicon on insulator layer by wafer b

Details Method of producing a thin silicon on insulator layer by wafer b Method of producing a thin silicon on insulator layer by wafer b

1990-05-07

1991-06-18

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156630, 156633, 156645, 156657, 156662, 252 793, 252 794, 252 795, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

050247239

ABSTRACT:
A method for forming a thin crystal layer of silicon on top of a insulating layer that is supported by a silicon wafer used for electronic device applications. Carbon ions are implanted in a silicon wafer in order to form an etch stop. Said wafer is bonded to a supporting wafer that has an insulating surface layer of silicon oxide or silicon nitride. The silicon substrate of the implanted wafer is removed using an alkaline etching solution or grinding and alkaline etching. The remaining carbon implanted layer forms the thin silicon layer.

REFERENCES:
patent: 3721593 (1973-03-01), Hays et al.
patent: 4601779 (1986-07-01), Abernathey

Affiliated with

Also associated with

Rating

Method of producing a thin silicon on insulator layer by wafer b does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of producing a thin silicon on insulator layer by wafer b, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing a thin silicon on insulator layer by wafer b will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-144073