Method of producing a tensioned layer on a substrate

Details Method of producing a tensioned layer on a substrate Method of producing a tensioned layer on a substrate

2011-03-29

2011-03-29

Stark, Jarrett J (Department: 2823)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C438S311000, C438S530000, C257S018000, C257S347000

Reexamination Certificate

active

07915148

ABSTRACT:
A silicon on insulator (SOI) substrate is converted into a strained SOI substrate by first providing an SOI substrate having a thin silicon layer and an insulator and at least one first epitaxial relaxing layer on the SOI-substrate. Then a defect region is produced in a layer by implantation of SI ions above the silicon layer of the SOI-substrate. Finally the first layer is relaxed by a thermal treatment in an inert atmosphere to simultaneously strain the silicon layer of the SOI-substrate via dislocation mediated strain transfer and to produce the strained silicon layer directly on the insulator.

REFERENCES:
patent: 6515335 (2003-02-01), Christiansen et al.
patent: 6689671 (2004-02-01), Yu et al.
patent: 6746902 (2004-06-01), Maa et al.
patent: 6767802 (2004-07-01), Maa et al.
patent: 6774015 (2004-08-01), Cohen et al.

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