Method of producing a semiconductor wafer and a cleaning apparat

Cleaning and liquid contact with solids – Processes – For metallic – siliceous – or calcareous basework – including...

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134 4, 134 2219, 134 40, C03C 2300, B08B 700, B08B 900

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active

059221372

ABSTRACT:
A method of producing a semiconductor wafer in which a semiconductor wafer cut by a wire saw can be cleaned efficiently and in automatic steps and abrasive grains are substantially completely removed away, and a cleaning apparatus for the method are provided. A semiconductor ingot is cut by a wire saw into cut semiconductor wafers. Each of the cut semiconductor wafers is degrease-cleaned, the semiconductor wafer which has been degrease-cleaned is oil-water separation-cleaned, the semiconductor wafer which has been oil-water separation-cleaned is rinsed, abrasive grains are removed away from the surface of the semiconductor wafer which has been rinse-cleaned, by alkali cleaning, the semiconductor wafer which has been abrasive grain removal-cleaned is separated from a slicing plate.

REFERENCES:
patent: 3128213 (1964-04-01), Gault et al.
patent: 3936328 (1976-02-01), Nakata
patent: 4372788 (1983-02-01), Lancz
patent: 4501258 (1985-02-01), Dyer et al.
patent: 5599438 (1997-02-01), Shiramizu et al.
patent: 5674827 (1997-10-01), Kawashima et al.
patent: 5762779 (1998-06-01), Shiramizu et al.

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