Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Patent
1995-03-30
1997-09-16
Kunemund, Robert
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
148DIG26, 148DIG164, 438479, H01L 2120
Patent
active
056680465
ABSTRACT:
In a field intensity relaxation of the drain end of a MOSFET, a projective area is not increased with a reduced electrostatic coupling of the source or drain with the gate. The MOSFET satisfying such condition is fabricated on the SOIS film formed by processes of the lateral vapor phase epitaxial growth and the like. A U-shape low concentration impurity region is provided on a gate electrode through a gate dioxide film and high concentration impurity regions are formed at the tops of protrusions. The gate electrode is embedded in insulation films, and the transistor region is fabricated by the lateral vapor phase epitaxial growth and the like.
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Koh Risho
Ogura Atsushi
Kunemund Robert
NEC Corporation
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