Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-01-25
2011-01-25
Nguyen, Khiem D (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S618000, C257S774000, C257SE21627, C257SE21641
Reexamination Certificate
active
07875544
ABSTRACT:
A reduction in the intersection of vias on the last layer (“VL”) and holes in the last thin metal layer (“MLHOLE”) can be achieved without degrading product yield or robustness or increasing copper dishing. The mutation of some dense redundant VLs to MLHOLEs decreases the number of intersections between VLs and MLHOLEs.
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Demm Ernst H.
Hirsch Alexander M.
Leung Pak
Wong Robert C.
Brinks Hofer Gilson & Lione
Infineon - Technologies AG
International Business Machines - Corporation
Nguyen Khiem D
United Microelectronics Co.
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