Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Patent
1996-11-19
1999-05-18
Bowers, Charles
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
148DIG93, H01L21/268
Patent
active
059045507
ABSTRACT:
A method of preparing a semiconductor device, comprising: forming an amorphous silicon layer on a substrate, and applying shots of an excimer laser beam to the amorphous silicon layer to convert the amorphous silicon layer into a polysilicon layer having a plurality of silicon grains, each of the grains having a grain size and including a crystallite having a crystallite size on the (111) plane, an average value of the crystallite sizes on the (111) plane of the crystallites included in the polysilicon layer being sixty percent or greater of an average value of the grain size.
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Bowers Charles
Casio Computer Co. Ltd.
Whipple Matthew
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