Method of producing a resistance element for a resistance thermo

Details Method of producing a resistance element for a resistance thermo Method of producing a resistance element for a resistance thermo

1984-04-05

1986-12-09

Niebling, John F.

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419215, 338308, 374185, C23C 1438

Patent

active

046279024

ABSTRACT:
A resistance thermometer element having a thin layer of platinum metal on an insulating substrate is formed by magnetron sputtering in a gaseous atmosphere containing at least 10% by volume of oxygen. Any balance gas has less than 10% by volume of argon, krypton and xenon. The atmosphere may have up to 100% oxygen with any balance gas being inert to platinum. Air can be used. A planar magnetron may be used.

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Chapman, Brian, Glow Discharge Processes: Sputtering and Plasma Etching, John Wiley & Sons, New York, pp. 260-270.
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Chemical Abstracts, vol. 88, 1978, 88.97990a, p. 570.
Thornton, John A. and Penfold, Alan S., "Cylindrical Magnetron Sputtering", Thin Film Processes, John L. Vossen and Werner Kern, eds., Academic Press, New York, 1978, pp. 76-83.
Waits, Robert K., "Planar Magnetron Sputtering", Thin Film Processes, John L. Vossen and Werner Kern, eds., Academic Press, New York, 1978, pp. 131-136.
Bennewitz, C. D., et al., "Structural and Electrical Properties of Films Sputtered from a Pt Cathode in Argon-Oxygen Mixtures," Journal of Applied Physics, vol. 46, No. 2, Feb. 1975, pp. 558-567.

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