Method of producing a porous dielectric element and...

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate

Reexamination Certificate

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C438S623000

Reexamination Certificate

active

07732348

ABSTRACT:
A porous dielectric element is produced by forming a first dielectric and a second dielectric. The second dielectric is dispersed in the first dielectric. The second dielectric is then removed from the second dielectric by using a chemical dissolution. The removal of the second dielectric from the first dielectric leaves pores in the first dielectric. The pores, which are filled with air, improves the overall dielectric constant of the resulting dielectric element.

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Favennec, et al., “Porous extreme low kappa (ELkappa) dielectrics using a PECVD porogen approach;” Materials Science in Semiconductor Processing, Elsevier Science Publishers, B.V., Barking, UK, vol. 7, No. 4-6, 2004, pp. 277-282, XP004639152; ISSN: 1369-8001.
Preliminary French Search Report, FR 06 55558, dated Sep. 26, 2007.

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