Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-12-03
2010-06-08
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S623000
Reexamination Certificate
active
07732348
ABSTRACT:
A porous dielectric element is produced by forming a first dielectric and a second dielectric. The second dielectric is dispersed in the first dielectric. The second dielectric is then removed from the second dielectric by using a chemical dissolution. The removal of the second dielectric from the first dielectric leaves pores in the first dielectric. The pores, which are filled with air, improves the overall dielectric constant of the resulting dielectric element.
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Favennec, et al., “Porous extreme low kappa (ELkappa) dielectrics using a PECVD porogen approach;” Materials Science in Semiconductor Processing, Elsevier Science Publishers, B.V., Barking, UK, vol. 7, No. 4-6, 2004, pp. 277-282, XP004639152; ISSN: 1369-8001.
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Favennec Laurent
Jeannot Simon
Gardere Wynne & Sewell LLP
Novacek Christy L
Smith Zandra
STMicroelectronics S.A.
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