Method of producing a nitride semiconductor device and...

Details Method of producing a nitride semiconductor device and... Method of producing a nitride semiconductor device and...

2009-03-24

2010-11-16

Chaudhari, Chandra (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Including semiconductor material other than silicon or...

Group iii-v compound

C257SE29089

Reexamination Certificate

active

07834423

ABSTRACT:
AlxInyGa1-x-yN (0≦x≦1; 0≦x≦1; 0≦x+y≦1) layered device chips are produced by the steps of preparing a defect position controlled substrate of AlxInyGa1-x-yN (0≦x≦1; 0≦y≦1; 0≦x+y≦1) having a closed loop network defect accumulating region H of slow speed growth and low defect density regions ZY of high speed growth enclosed by the closed loop network defect accumulating region H, growing epitaxial upper layers B selectively on the low defect density regions ZY, harmonizing outlines and insides of device chips composed of the upper layers B with the defect accumulating region H and the low defect density regions ZY respectively, forming upper electrodes on the upper layers B or not forming the electrodes, dissolving bottom parts of the upper layers B by laser irradiation or mechanical bombardment, and separating the upper layer parts B as device chips C from each other and from the substrate S. Chip-separation is done instantly by the high power laser irradiation or mechanical shock without cutting the substrate S. The defect position controlled substrate S is repeatedly reused.

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