Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2002-10-23
2008-08-19
Lebentritt, Michael S. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S618000, C257S734000, C257SE51032, C257SE21476, C257SE21477, C977S742000
Reexamination Certificate
active
07413971
ABSTRACT:
An arrangement and process for producing a circuit arrangement is disclosed. The process includes having a layer arrangement, in which two electrically conductive interconnects running substantially parallel to one another are formed on a substrate. At least one auxiliary structure is formed on the substrate and between the two interconnects, running in a first direction, which first direction includes an angle of between 45 degrees and 90 degrees with a connecting axis of the interconnects, running orthogonally with respect to the two interconnects, the at least one auxiliary structure being produced from a material which allows the at least one auxiliary structure to be selectively removed from a dielectric layer. The dielectric layer is formed between the two interconnects, in such a manner that the at least one auxiliary structure is at least partially covered by the dielectric layer.
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Hönlein Wolfgang
Kreupl Franz
Steinhögl Werner
Dicke Billig & Czaja, PLLC
Lebentritt Michael S.
Roman Angel
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