Method of producing a layer system and a layer system as produce

Details Method of producing a layer system and a layer system as produce Method of producing a layer system and a layer system as produce

1992-04-08

1993-10-05

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156610, 156DIG64, 148DIG147, 437200, C30B 110

Patent

active

052501477

ABSTRACT:
An epitaxial growth of a first component of a multilayer stack for use in optical, electro-optical and electronic or magnetic components, e.g. on a silicon wafer, can be formed by depositing a second component in a form in which that second component produces a precipitate or inclusions in the first component which with continued deposition may be partly replaced by a third component so that the precipitate itself is buried in a monocrystalline structure and, after a thermal treatment in which the precipitate coalesces, a buried layer is formed of the second component or a compound thereof with, say, the first component, in that monocrystalline structure.

REFERENCES:
patent: 4180596 (1979-12-01), Crowder et al.
patent: 4558507 (1985-12-01), Okabayashi et al.
patent: 4570328 (1986-02-01), Price et al.
patent: 4619038 (1986-10-01), Pintchouski
patent: 4707197 (1987-11-01), Hensel et al.
patent: 4731318 (1988-03-01), Ruhe et al.
Schowalter et al, "Control of Misoriented Grains and Pinholes in CoS.sub.2 Grown on Si(Gel)", Journal of Crystal Growth, vol. 111 (1991) pp. 948-956.

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