Method of producing a field effect transistor arrangement

Details Method of producing a field effect transistor arrangement Method of producing a field effect transistor arrangement

2011-07-12

2011-07-12

Tran, Minh-Loan T (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C257SE21563

Reexamination Certificate

active

07977167

ABSTRACT:
A method of producing a field effect transistor arrangement. A substrate having a first crystal surface orientation is provided. A first layer is formed above a first portion of the substrate, the first layer having a second crystal surface orientation different from the first crystal surface orientation. A second layer is formed on at least a second portion of the substrate and adjacent to the first layer, the second layer having the first crystal surface orientation. A first buried oxide layer is formed between the substrate and the first layer. Micro-cavities are formed in the second layer and oxidizing the micro-cavities, thereby forming a second buried oxide layer between the substrate and the second layer. A first field effect transistor of a first conductivity type is formed in or on the first layer. A second field effect transistor of a second conductivity type is formed in or on the second layer.

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