Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Patent
1992-02-10
2000-10-31
Tsai, Jey
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
H01L 2100
Patent
active
061401439
ABSTRACT:
A method of micromachining silicon to form relatively thick boss areas and relatively thin flexure areas. The method includes the provision of a deep diffusion of n-type dopant atoms in the vicinity of the desired thick boss structures on a p-type silicon substrate. A layer having a thickness equal to the desired thickness of a flexure area is epitaxially grown of n-type doped silicon over the previously doped p-type substrate. Finally, the p-type doped silicon is etched away by a suitable etchant leaving relatively thick boss areas joined by relatively thin flexure areas.
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Christel Lee A.
Vermeulen Theodore J.
Lucas Novasensor Inc.
Tsai Jey
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