Method of producing a bipolar CMOS device

Details Method of producing a bipolar CMOS device Method of producing a bipolar CMOS device

1991-07-09

1992-07-21

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 56, 437 59, 437162, 437200, 148DIG9, H01L 21265

Patent

active

051322340

ABSTRACT:
A method of producing a bipolar CMOS device for providing a unipolar CMOS transistor with a polysilicon gate and a self-aligned NPN and VPNP transistor on a same chip, so that a high performance analog and digital BiCMOS device can be realized.

REFERENCES:
patent: 4784966 (1988-11-01), Chen
patent: 4902639 (1990-02-01), Ford
patent: 4987089 (1991-01-01), Roberts
patent: 5026654 (1991-06-01), Tamba et al.
patent: 5047357 (1991-09-01), Eklund

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