Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Patent
1997-02-04
1998-12-15
Breneman, R. Bruce
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
216 37, H01L 21308
Patent
active
058492062
ABSTRACT:
A method of producing a biocompatible prosthesis based on a substrate made essentially of metal or ceramic. The substrate is placed into a reactor chamber of a cathodic vapor deposition arrangement and the chamber is evacuated to a predetermined pressure. A predetermined, negative bias voltage is then applied to the substrate and the substrate is surface treated by adding an etching gas to the reactor chamber, at a predetermined, first flow rate and coupling in a high frequency power with a first, predetermined power density for ionic etching for a first, predetermined period of time. The surface treated substrate is separated from the negative bias voltage and a semiconductor cover layer is chemical vapor-phase deposited on the substrate by adding to the reactor chamber a multi-component mixture of process gases containing a semiconductor element in bound form at a second, predetermined flow rate and coupling-in of HF power with a predetermined, second power density, for a second, predetermined time period.
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Bolz, A. et al., "New Coating Materials for Artificial Heart Valves", Ima of the Twenty-First Century, Proceedings of the Annual International Conference of the IEEE Engineering in Medicine an Biology Society (Cat. No. 89CH2770-6, Seattle, WA, 9-12 Nov. 1989, Bd. 11, 1989, New York, NY, IEEE, pp. 164-166.
Amon Michael
Bolz Armin
Alanko Anita
Biotronik Mess- und Therapiegerate GmbH & Co. Ingenieurburo Berl
Breneman R. Bruce
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