Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Plural fluid growth steps with intervening diverse operation
Reexamination Certificate
2011-03-08
2011-03-08
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Plural fluid growth steps with intervening diverse operation
C438S498000, C438S504000, C257SE21092
Reexamination Certificate
active
07902053
ABSTRACT:
Formation and etching of an n type epitaxial layer and formation and etching of a p type epitaxial layer are alternately performed on the semiconductor substrate for at least three times to form all semiconductor layers, of the epitaxial layers. Thereby, impurity concentration profiles of the semiconductor layers can be uniform, and pn junctions can be formed vertically to a wafer surface. Furthermore, the semiconductor layers can each be formed with a narrow width, so that impurity concentrations thereof are increased. With this configuration, high breakdown voltage and low resistance can be achieved.
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Ishida Hiroyasu
Sayama Yasuyuki
Morrison & Foerster / LLP
Sanyo Electric Co. Ltd
Sanyo Semiconductor Co., Ltd
Thomas Toniae M
Wilczewski Mary
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