Method of processing semiconductor wafer

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Plural fluid growth steps with intervening diverse operation

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Other Related Categories

C438S498000, C438S504000, C257SE21092

Type

Reexamination Certificate

Status

active

Patent number

07902053

Description

ABSTRACT:
Formation and etching of an n type epitaxial layer and formation and etching of a p type epitaxial layer are alternately performed on the semiconductor substrate for at least three times to form all semiconductor layers, of the epitaxial layers. Thereby, impurity concentration profiles of the semiconductor layers can be uniform, and pn junctions can be formed vertically to a wafer surface. Furthermore, the semiconductor layers can each be formed with a narrow width, so that impurity concentrations thereof are increased. With this configuration, high breakdown voltage and low resistance can be achieved.

REFERENCES:
patent: 5177028 (1993-01-01), Manning
patent: 2005/0006699 (2005-01-01), Sato et al.
patent: 2005/0048701 (2005-03-01), Minato et al.
patent: 2009/0085149 (2009-04-01), Ishida et al.
patent: WO-02/067333 (2002-08-01), None
Ishida, H. et al., U.S. Office Action mailed Oct. 22, 2009, directed to U.S. Appl. No. 12/236,348; 9 pages.
Ishida, H. et al., U.S. Office Action mailed on Apr. 15, 2010, directed to related U.S. Appl. No. 12/236,348; 11 pages.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of processing semiconductor wafer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of processing semiconductor wafer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of processing semiconductor wafer will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2760336

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.