Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Reexamination Certificate
2005-01-04
2005-01-04
Hassanzadeh, Parviz (Department: 1763)
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
C156S345350, C156S345100, C118S715000
Reexamination Certificate
active
06838011
ABSTRACT:
The present invention relates to a method and an apparatus for processing PFC, which does not damage a vacuum pump, and in which maintenance and inspection works are readily performed, and an incineration process is not required. The processing apparatus10is constructed with a vacuum chamber12,and a vacuum pump16,a reaction gas introduction section17,a plasma process section18and a polymer collection section20that are successively disposed through a piping14in a succeeding stage of the vacuum chamber12.
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Hassanzadeh Parviz
Konrad Raynes & Victor LLP
Raynes Alan S.
Seiko Epson Corporation
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