Method of processing metal surface in dual damascene...

Details Method of processing metal surface in dual damascene... Method of processing metal surface in dual damascene...

2007-12-11

2007-12-11

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21579

Reexamination Certificate

active

11448034

ABSTRACT:
A processing method for the metal surface in a dual damascene manufacturing is applied to a dual damascene semiconductor structure. The dual damascene semiconductor structure has a metal structure and a spin-on-dielectric (SOD) layer formed on the metal structure, wherein the SOD layer has at least one opening exposing a partial surface of the metal structure. Before the opening is filled, the monoxide on the exposed surface is first removed, then the exposed surface is treated by the plasma at an angle inclined to an axis perpendicular to the exposed surface. The processing method provided in the present invention can avoid the exposed surface being damaged by the plasma and improve the adhesion force between the exposed metal surface and the stuff.

REFERENCES:
patent: 6809028 (2004-10-01), Chen et al.
patent: 2005/0107274 (2005-05-01), Daviot

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