Method of processing a surface of a semiconductor substrate

Details Method of processing a surface of a semiconductor substrate Method of processing a surface of a semiconductor substrate

1996-04-02

1998-12-15

Breneman, R. Bruce

Semiconductor device manufacturing: process

With measuring or testing

438745, 438974, 134 13, H01L 21302

Patent

active

058496033

ABSTRACT:
A surface processing method for evaluating semiconductor substrate is intended to clean a semiconductor substrate, which has the surface of a silicon layer exposed by removing the epitaxial layer by an acid mixture, by buffered HF and then to perform SC-1 cleaning. Placing the substrate for about 2 hours after the processing, then the varying rate of the SPV value is quite stable at about 5%, so that the minor carrier diffusion length can be measured with high precision. Furthermore, the lead time of evaluating a semiconductor substrate can be significantly reduced over the prior-art method.

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patent: 5454901 (1995-10-01), Tsuji
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