Etching a substrate: processes – Etching and coating occur in the same processing chamber
Patent
1997-04-04
2000-05-09
Bueker, Richard
Etching a substrate: processes
Etching and coating occur in the same processing chamber
118723, 156345, H01L 2100
Patent
active
060599855
ABSTRACT:
A method of processing a substrate has the following processes. After depositing a thin film onto a substrate by a CVD method, the front surface of the substrate is brought close to a gas supply surface of a gas supply mechanism to have a desired interval without making contact between the front surface and the gas supply surface. Afterwards, an etching gas is supplied into a back space of the substrate to generate plasma there, and further a purge gas is also supplied into a space between the gas supply surface and the substrate so that the purge gas flows into the back space through a peripheral-edge region of the substrate. This purge gas prevents radicals included in the plasma from diffusing into the space between the gas supply surface and the substrate.
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patent: 5871811 (1999-02-01), Wang et al.
Hasegawa Shin-ya
Mizuno Shigeru
Numasawa Yoichiro
Takahashi Nobuyuki
Yoshimura Takanori
Anelva Corporation
Bueker Richard
Powell Alva C.
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