Method of processing a substrate

Details Method of processing a substrate Method of processing a substrate

1997-12-10

2000-10-31

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438774, 438789, 438790, H01L 2131, H01L 21469

Patent

active

061402516

ABSTRACT:
A method of processing a semiconductor substrate, comprising the steps of: heating a substance within a first chamber, at a selected temperature which is above the minimum decomposition temperature of the substance, to cause decomposition of the substance into a predetermined gas; cooling the gas to below the minimum decomposition temperature of the substance; transporting the gas from the first chamber to a second chamber; and exposing a semiconductor substrate, located in the second chamber, to the cooled gas.

REFERENCES:
patent: 5719085 (1998-02-01), Moon et al.
patent: 5817549 (1998-10-01), Yamazaki et al.
patent: 5891809 (1999-04-01), Chau et al.

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