Method of processing a semiconductor wafer

Details Method of processing a semiconductor wafer Method of processing a semiconductor wafer

1995-05-12

1996-04-02

Pianalto, Bernard

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427 58, 427171, 4272481, 427299, 437173, 437225, 437925, H05H 124

Patent

active

055038816

ABSTRACT:
An improved fluid distribution head for a plasma processing system characterized by a non-planar dispersion plate provided with a plurality of apertures formed therethrough, and a mechanism for flowing a process gas through the apertures of the dispersion plate. The non-planar dispersion plate is preferably provided with a concave, spherical portion having a radius of curvature of at least four feet. The mechanism for flowing the process gas through the apertures includes an enclosure defining a chamber which communicates with the dispersion plate, a gas inlet communicating with the chamber, and a source of process gas coupled to the gas inlet. The fluid distribution head preferably forms a part of a complete plasma processing system including a wafer pedestal and an R.F. generator coupled to the pedestal to form a plasma between the dispersion plate and the wafer from the process gas flowing from the dispersion plate. A method for processing a semiconductor wafer includes the steps of clamping a wafer to a pedestal (thereby imposing a curvature on the wafer) and releasing a process fluid over the wafer through a plurality of apertures provided in a non-planar dispersion plate having a complementary curvature to the curvature of the wafer.

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Webster's Third New International Dictionary, Merriam Webster, Inc., 1987, p. 469.

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