Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-11-01
2005-11-01
Norton, Nadine (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S711000, C438S712000, C438S717000, C438S725000
Reexamination Certificate
active
06960533
ABSTRACT:
A surface processing apparatus is provided. In the apparatus, an etching rate ratio of an organic material such as a BARC of anti-reflective film to a resist of mask forming a pattern, that is, a selective ratio is high, the anti-reflective film being a means for forming the pattern with a high accuracy in surface processing of a semiconductor. In the surface processing apparatus, which uses a plasma, a deposition gas is added to a light element of hydrogen as the etching gas. Ions accelerated by a bias electric power supply accelerate etching reaction. Sputtering at edges of the mask can be reduced by using the light element of hydrogen as the etching gas, and the selective ratio of the anti-reflective film to the masking material can be increased by mixing the deposition gas with the hydrogen.
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Nakaune Koichi
Oyama Masatoshi
Antonelli, Terry Stout and Kraus, LLP.
Hitachi , Ltd.
Norton Nadine
Tran Binh X.
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