Etching a substrate: processes – Forming or treating article containing magnetically...
Patent
1995-11-16
1997-03-04
Tung, T.
Etching a substrate: processes
Forming or treating article containing magnetically...
1566431, 1566461, 216 67, 216 75, 365171, G11C 1114, C23F 112
Patent
active
056075995
ABSTRACT:
Disclosed is a method of processing a magnetic thin film, comprising the steps of disposing a mask having a predetermined pattern on a magnetic thin film consisting of a magnetic material containing at least one element selected from the group consisting of Fe, Co and Ni, supplying a reactive gas containing activated BCl.sub.3 to an exposed portion of said magnetic thin film and allowing said reactive gas to react with said magnetic material, and removing the magnetic thin film of the exposed portion to perform a desired patterning.
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M. J. Vasile, et al., "Chemically Assisted Sputter Etching of Permalloy Using Co or Cl.sub.2 ", J. Vac. Sci. Technol., A4 (4), Jul./Aug. 1986, pp. 1841-1849.
Keizo Kinoshita, et al., "Reactive Ion Etching of Fe-Si-Al Alloy For Thin Film Head", IEEE Transactions on Magnetics, vol. 27, No. 6, Nov. 1991, pp. 4888-4890.
Horioka Keiji
Ichihara Katsutaro
Okubo Michiko
Kabushiki Kaisha Toshiba
Tung T.
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