Method of processing a conductive layer and forming a semiconduc

Details Method of processing a conductive layer and forming a semiconduc Method of processing a conductive layer and forming a semiconduc

1998-03-02

2000-10-24

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438624, H01L 213205, H01L 214763

Patent

active

061366781

ABSTRACT:
A method for processing a conductive layer, such as a doped polysilicon layer (14) of a gate stack, provides a degas step after precleaning to reduce particle count and defectivity. The conductive layer is provided on a substrate (10), e.g., a silicon wafer. The substrate (10) and conductive layer are subjected to an elevated temperature, under a vacuum, whereby certain species are liberated. The substrate having the conductive layer formed thereon is then removed from the chamber, and moved to a second, separate chamber, in which a second conductive layer (20) is deposited. By switching chambers, the liberated species are largely prevented from contributing to particle count at the interface between the conductive layers. Alternatively, the second conductive layer is formed in the same chamber, provided that the liberated species are removed from the chamber prior to deposition of the second conductive layer.

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