Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-10-25
2005-10-25
Zarabian, Amir (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S604000, C438S607000, C438S752000, C438S753000, C438S933000
Reexamination Certificate
active
06958286
ABSTRACT:
The invention forms an epitaxial silicon-containing layer on a silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface and avoids creating a rough surface upon which the epitaxial silicon-containing layer is grown. In order to avoid creating the rough surface, the invention first performs a hydrofluoric acid etching process on the silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface. This etching process removes most of oxide from the surface, and leaves a first amount of oxygen (typically 1×1013−1×1015/cm2of oxygen) on the silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface. The invention then performs a hydrogen pre-bake process which heats the silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface sufficiently to remove additional oxygen from the surface and leave a second amount of oxygen, less than the first amount, on the silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface. The heating process leaves an amount of at least 5×1012/cm2of oxygen (typically, between approximately 1×1013/cm2and approximately 5×1013/cm2of oxygen) on the silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface. By leaving a small amount of oxygen on the silicon germanium, patterned strained silicon, or patterned silicon-on-insulator surface, the heating processes avoid changing the roughness of the silicon germanium, patterned strained silicon, or patterned thin silicon-on-insulator surface. Then the process of epitaxially growing the epitaxial silicon-containing layer on the silicon germanium, patterned strained silicon, or patterned silicon-on-insulator surface is performed.
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“Dedicated Pre-Clean Reduces Epi's Thermal Budget”, Arkadii V. Samoilov, Dale Du Bois, Paul B. Comita & David Carlson, Applied Materials Inc., Santa Clara, CA, Nov. 1, 2000, 6 pages http://www.e-insite.net/semiconductor/index.asp?layout=articlePri. . . .
Bedell Stephan W.
Chen Huajie
Mocuta Dan M.
Murphy Richard J.
Sadana Devendra K.
Anderson, Esq. Jay H.
McGinn & Gibb PLLC
Tran Thanh Y.
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