Method of preventing short circuits in magnetic film stacks

Details Method of preventing short circuits in magnetic film stacks Method of preventing short circuits in magnetic film stacks

2005-05-17

2005-05-17

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S003000, C438S692000, C438S696000, C438S695000, C438S720000, C438S754000, C438S073000

Reexamination Certificate

active

06893893

ABSTRACT:
A method for preventing electrical short circuits in a multi-layer magnetic film stack comprises providing a film stack that includes a layer of magnetic material having an exposed surface. A protective layer is deposited on the exposed surface of the magnetic layer. The protective layer may comprise, for example, a fluorocarbon or a hydrofluorocarbon. The film stack is etched and the protective layer protects the exposed surface from a conductive residue produced while etching the film stack. The method may be used in film stacks to form a magneto-resistive random access memory (MRAM) device.

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