Method of preventing semiconductor layers from bending and...

Details Method of preventing semiconductor layers from bending and... Method of preventing semiconductor layers from bending and...

2005-04-19

2005-04-19

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S439000

Reexamination Certificate

active

06881645

ABSTRACT:
Disclosed herein are various methods for preventing bending of a patterned SOI layer during trench sidewall oxidation, the methods comprising providing a patterned SOI layer having at least one trench, said patterned SOI layer disposed upon an underlying buried silicon oxide layer; and blocking diffusion of oxygen between said patterned SOI and buried silicon oxide layer.

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