Method of preventing residue on an insulator layer in the fabric

Details Method of preventing residue on an insulator layer in the fabric Method of preventing residue on an insulator layer in the fabric

1989-07-12

1991-02-05

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437229, 437944, H01L 21443

Patent

active

049904671

ABSTRACT:
A method for fabrication of semiconductor device in which a tungsten film only exists on contact hole which is comprising the steps of depositing a insulator layer on the silicon substrate being doped by impurity, depositing a photoresist high temperature resistant resin on the insulator layer in order to form a contact hole, forming a contact hole by etching the insulator layer using the photoresist resin as a mask, selectively depositing tungsten film on the contact hole and removing the photoresist layer, and a method for fabrication of semiconductor device which is comprising the steps of depositing the first photoresist resin layer followed by depositing the second photoresist resin layer on the insulator layer forming a pattern to the first and the second photoresist resin layer, forming a contact hole by etching the insulator layer, selectively depositing tungsten film on the contact hole after removing the second photoresist resin layer and removing the first photoresist resin layer.

REFERENCES:
patent: 3429029 (1969-02-01), Langdon
patent: 4532702 (1985-08-01), Gigante et al.
patent: 4824802 (1989-02-01), Brown et al.
"Selective LPCVD Tungsten for Contact Barrier Applications", Levy et al., J. Electrochem., Soc.; Solid State Science and Technology, vol. 133, No. 9, pp. 1905-1912, Sep. 1986.

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