Method of preventing photoresist residues

Details Method of preventing photoresist residues Method of preventing photoresist residues

2007-10-09

2007-10-09

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S706000, C438S714000, C438S725000, C134S001100, C134S001200, C134S001300, C216S018000, C216S039000, C216S058000, C216S067000

Reexamination Certificate

active

10736918

ABSTRACT:
A method to prevent photoresist residues formed in an aperture is provided. The method includes using a halogen-containing plasma treatment before the aperture is filled with a photoresist. Due to the halogen-containing plasma treatment, amine components on the sidewalls of a via or contact hole or trench opening can be efficiently removed. Accordingly, photoresist residues or via poison can be avoided.

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Rossnagel et al., Handbook of Plasma Processing, 1990, Noyes Publications, pp. 198.

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