Method of preventing damages of gate oxides of a semiconductor w

Details Method of preventing damages of gate oxides of a semiconductor w Method of preventing damages of gate oxides of a semiconductor w

1999-02-24

2000-12-12

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438 9, 438743, H01L 2100

Patent

active

06159864&

ABSTRACT:
The present invention provides a method for preventing gate oxides on a semiconductor wafer from being damaged by electromagnetic waves or particles generated in a plasma-related process. The semiconductor wafer comprises a substrate, a plurality of gate oxides positioned separately on the substrate, a first dielectric layer positioned on the gate oxides for isolating the gate oxides, and a conducting layer positioned on the first dielectric layer having at least one testing slit with a predetermined test pattern installed above each of the gate oxides. The method first performs a predetermined plasma-related process on the surface of the semiconductor wafer. Next, an electrical test is performed to find damaged gate oxides out of the gate oxides on the substrate. Based on damages of the damaged gate oxides, the predetermined plasma-related process is adjusted to prevent gate oxides on other semiconductor wafers from being damaged in the predetermined plasma-related process.

REFERENCES:
patent: 5781445 (1998-07-01), Shiue et al

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