Method of preventing corrosion of a metal structure exposed in a

Details Method of preventing corrosion of a metal structure exposed in a Method of preventing corrosion of a metal structure exposed in a

1999-03-18

2000-10-10

Smith, Matthew

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438700, 438725, 438637, 438618, H01L 21308

Patent

active

061301671

ABSTRACT:
A process used to prevent attack of an aluminum based structure, exposed in a non-fully landed via hole, from solvents used during the wet stripping cycle, performed to remove the via hole defining photoresist shape, has been developed. The process features the formation of a protective aluminum oxide layer, on the exposed side of the aluminum based structure, via use of a plasma treatment, performed in an H.sub.2 O/N.sub.2 ambient. The H.sub.2 O/N.sub.2 plasma treatment procedure is performed after a dry plasma, photoresist stripping step, but prior to a final wet photoresist stripping step. The aluminum oxide layer offers protection of the exposed regions of the aluminum structure, located in the non-fully landed via hole, from reaction or corrosion, that can result from exposure of aluminum to the solvents used in the final wet photoresist stripping cycle.

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