Method of preventing bowing in a via formation process

Details Method of preventing bowing in a via formation process Method of preventing bowing in a via formation process

1998-11-05

2000-09-26

Bowers, Charles

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

H01L 21311

Patent

active

06124208&

ABSTRACT:
The present invention relates to a method for forming a via which includes: forming a base layer on a semiconductor substrate; forming a conductive layer pattern on the base layer; forming an insulating layer on the base layer having the conductive layer pattern formed thereon; selectively etching the insulating layer in order to form a via exposing an upper surface of the conductive layer pattern; and using an argon (Ar) plasma treatment to form a protective layer on a profile of the via. Also, after using an oxygen plasma treatment to remove a photoresist pattern and remains in the via after the Ar plasma treatment, the protective layer formed on the profile of the via by the Ar plasma treatment prevents the profile of the via contact hole from being bowed, and thus vertically maintains the profile of the via contact hole.

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patent: 6033990 (2000-03-01), Kishimoto et al.
patent: 6040248 (2000-03-01), Chen et al.

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