Method of pretexturing a cathode sputtering target and sputter c

Details Method of pretexturing a cathode sputtering target and sputter c Method of pretexturing a cathode sputtering target and sputter c

1992-03-03

1997-05-27

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419213, 20429808, 20429812, C23C 1434

Patent

active

056328699

ABSTRACT:
A sputtering target is pretextured, prior to being subjected to the initial sputter precleaning and use in a sputter processing apparatus, by artificially roughening the sputtering surface of the target to produce a texture which functions, when used in the sputter coating of substrates, in a manner equivalent to the surface of a target roughened by an hour or more of a sputter burn-in process. The surface is textured by the machining of grooves or other irregular microstructure therein, by chemical etching, by mechanical abrading, or by another means other than sputter processing. A 0.05 to 3.0 millimeter texture size such as achieved with annular V-grooves 0.025 inches deep and spaced at 0.0625 inches is preferred.

REFERENCES:
patent: 4431499 (1984-02-01), Henager, Jr.
patent: 4610774 (1986-09-01), Sakata et al.
patent: 4724060 (1988-02-01), Sakata et al.
patent: 4834860 (1989-05-01), Demaray et al.
Semple, W.E., "Sputtering Cathodes Having Variable Roughness", IBM Technical Disclosure Bulletin, vol. 12, No. 10, Mar. 1970.
Arimoto et al., "Improvement . . . Resistance", Conference, 27th Electronic Comp. Conf., Arlington, VA USA May 1977 pp. 61-67.

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