Method of preparing semiconductor substrates

Details Method of preparing semiconductor substrates Method of preparing semiconductor substrates

1986-12-16

1988-03-22

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156637, 156645, 156651, 156662, 156903, 252 791, 252 792, 252 795, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

047326484

ABSTRACT:
A new method for GaAs substrate preparation which significantly reduces the ormation of oval defects during MBE growth of selectively doped n-Al.sub.x Ga.sub.1-x As/GaAs heterostructures. The method simply requires treatment in H.sub.2 SO.sub.4 after mechano-chemical polishing in NaOCl solution and generation of a protective surface oxide during in soldering. Routinely a density of oval defects of less than 200 cm.sup.-2 is achieved for 2-.mu.m thick heterostructures. The efficiency of the new preparation procedure is demonstrated by 2DEG mobilities in excess of 10.sup.6 cm.sup.2 /Vs at 6K obtained with a spacer width as narrow as 18 nm.

REFERENCES:
patent: 3342652 (1967-09-01), Reisman et al.
patent: 3348987 (1967-10-01), Stark et al.
patent: 3738882 (1973-06-01), Basi

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