Method of preparing quantum dot-inorganic matrix composites

Details Method of preparing quantum dot-inorganic matrix composites Method of preparing quantum dot-inorganic matrix composites

2011-07-26

2011-07-26

Dickey, Thomas L (Department: 2893)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C427S215000

Reexamination Certificate

active

07985607

ABSTRACT:
A method for preparing a quantum dot-inorganic matrix composite includes preparing an inorganic matrix precursor solution containing one or more quantum dot precursors, spin-coating the precursor solution on a substrate to form an inorganic matrix thin film, and heating the inorganic matrix thin film to form an inorganic matrix, while growing the quantum dot precursors into quantum dots in the inorganic matrix, thereby yielding a quantum dot-inorganic matrix composite. The quantum dot-inorganic matrix composite thus obtained has a structure in which the quantum dots have a high efficiency and are densely filled in an inorganic matrix. The quantum dot-inorganic matrix composites can be prepared using a low temperature process, and can be used for various displays and electronic device material applications.

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Murray et al.. “Synthesis and Characterization of Nearly Monodisperse CdE (E=S, Se, Te) Semiconductor Nanocrystallites”, 1993, J. AM. Chem. Soc., vol. 115, pp. 8706-8715.

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